Title :
Characteristics of IMPATT Diode Reflection Amplifiers
Author :
Laton, R.W. ; Haddad, G.I.
Abstract :
The nonlinear characteristics of stable IMPATT diode reflection amplifiers including the dependence of gain, bandwidth and saturation properties upon device material, doping profile and operating conditions are given.
Keywords :
Admittance measurement; Circuits; Diodes; Doping profiles; Laboratories; Power generation; Radio frequency; Radiofrequency amplifiers; Reflection; Voltage;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123135
