Performance and robustness testing of SiC power devices

This paper presents the development of a test circuit for unified testing of nominal and overload working conditions of new generation silicon-carbide power transistors and diodes, of diverse technologies and different voltage classes. The circuit is presently suitable for characterisation up to 1 kV and enables for the investigation of the device performance at different case-temperature values, as well as for the analysis of electro-thermal mismatches between devices operated in parallel.