Design and test of a 0.18μm CMOS low dropout voltage regulator for WSN RF chip

Author

Xiangning, Fan ; Kuan, Bao ; Yanli, Huang

Author_Institution

Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China

Volume

1

fYear

2010

fDate

17-20 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, a low dropout voltage regulator (LDO) for radio frequency (RF) circuits of IEEE802.15.4/ZigBee wireless sensor network (WSN) is proposed and implemented by using TSMC 0.18μm CMOS process. Bandgap reference circuit startup problem and stability of LDO are key problems of LDO circuit design, and their reasonable solutions are given in this paper. Chip measurement results demonstrate that bandgap reference can output a steady voltage of 900mV, which meets the design specification. When the bandgap reference voltage is applied, the LDO can output a voltage of 1.8V stably, and the error voltage is within design specification. The layout size (including the pads) of the LDO is 765μm×545μm.

Keywords

CMOS integrated circuits; integrated circuit layout; personal area networks; radiofrequency integrated circuits; voltage regulators; wireless sensor networks; CMOS low dropout voltage regulator; IEEE 802.15.4-ZigBee wireless sensor network; RF circuits; TSMC CMOS process; bandgap reference circuit startup problem; chip measurement; circuit design; radio frequency circuits; size 0.18 mum; voltage 1.8 V; voltage 900 mV; Capacitors; Circuit stability; Photonic band gap; Regulators; Resistance; Voltage control; Wireless sensor networks; bandgap reference; error amplifier; low dropout voltage regulator; power management; wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals Systems and Electronics (ISSSE), 2010 International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6352-7

Type

conf

DOI

10.1109/ISSSE.2010.5607077

Filename

5607077