• DocumentCode
    2636577
  • Title

    Er-doped wet thermal oxides of InAlP on GaAs for optoelectronics integration

  • Author

    Huang, Mingjun ; Hall, Douglas C.

  • Author_Institution
    Dept. of Electr. Eng., Notre Dame Univ., IN, USA
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    784
  • Lastpage
    785
  • Abstract
    Room temperature, 1.53 μm photoluminescence from wet thermally oxidized In0.47Al0.53P (lattice matched to GaAs) shows the phosphate-rich host for implanted Er provides broad 61 nm emission and a long 8 ms lifetime suitable for optoelectronic integration.
  • Keywords
    III-V semiconductors; aluminium compounds; erbium; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; optical materials; oxidation; photoluminescence; semiconductor doping; 1.53 mum; 8 ms; Er-doped wet thermal oxides; GaAs; In0.47Al0.53P:Er; optoelectronics integration; photoluminescence; Erbium; Gallium arsenide; Optical waveguides; Photoluminescence; Pump lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide lasers; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548234
  • Filename
    1548234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2636577