DocumentCode :
2636577
Title :
Er-doped wet thermal oxides of InAlP on GaAs for optoelectronics integration
Author :
Huang, Mingjun ; Hall, Douglas C.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
784
Lastpage :
785
Abstract :
Room temperature, 1.53 μm photoluminescence from wet thermally oxidized In0.47Al0.53P (lattice matched to GaAs) shows the phosphate-rich host for implanted Er provides broad 61 nm emission and a long 8 ms lifetime suitable for optoelectronic integration.
Keywords :
III-V semiconductors; aluminium compounds; erbium; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; optical materials; oxidation; photoluminescence; semiconductor doping; 1.53 mum; 8 ms; Er-doped wet thermal oxides; GaAs; In0.47Al0.53P:Er; optoelectronics integration; photoluminescence; Erbium; Gallium arsenide; Optical waveguides; Photoluminescence; Pump lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Waveguide lasers; Waveguide transitions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548234
Filename :
1548234
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2636577
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