Title :
Performance and Limitations of FETs as Microwave Power Amplifiers
Author :
Napoli, L. ; DeBrecht, R.
Abstract :
The GaAs FET has excellent potential as a microwave power amplifier and has demonstrated an f t 2 (PX) product exceeding that of silicon bipolar devices. The design, fabrication, and performance limitations of GaAs power FETs is discussed. Experimental results for a multigate 4 GHz device and a single gate 7 GHz device are presented.
Keywords :
Conductivity; Contact resistance; Fabrication; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave transistors; Power amplifiers; Silicon;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123166
