Title :
A high saturation output power (+22 dBm) polarization insensitive semiconductor optical amplifier
Author :
Tanaka, S. ; Tomabechi, S. ; Ekawa, M. ; Morito, K.
Author_Institution :
Fujitsu Labs. Ltd., Japan
Abstract :
We developed a broadband polarization insensitive SOA using a strained MQW active layer. A record-high saturation output power of +22 dBm was obtained with a low polarization sensitivity of < 0.3 dB at 1550 nm.
Keywords :
light polarisation; optical saturation; quantum well lasers; semiconductor optical amplifiers; 1550 nm; broadband SOA; high saturation output power; polarization insensitive SOA; polarization sensitivity; semiconductor optical amplifier; strained MQW active layer; Bandwidth; Costs; Indium phosphide; Optical polarization; Optical waveguides; Power amplifiers; Power generation; Quantum well devices; Semiconductor optical amplifiers; Tellurium;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548247
