Title :
Two-Dimensional Distributed Theory Schottky Barrier Field Effect for a Microwave Transistor
Author :
Alley, G.D. ; Talley, H.E. ; Wright, G.L.
Abstract :
A small signal equivalent circuit for a SBFET derived from the basic transport equations is extended to include the effects of finite propagation velocities along the contact metallizations. Resonances are shown to occur in the device y parameters due to distributed effects along these contacts.
Keywords :
Equations; Equivalent circuits; Metallization; Microwave FETs; Microwave devices; Microwave propagation; Microwave theory and techniques; Microwave transistors; Schottky barriers; Schottky gate field effect transistors;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123167
