Title :
Inverse modeling-a promising approach to know what is made and what should be made
Author :
Yamaguchi, Seiichiro ; Goto, Hiroshi
Author_Institution :
Technol. Dev. Div., Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its efficiency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required specification
Keywords :
MOSFET; circuit CAD; semiconductor device models; deep submicron MOSFET; device performance; device structures; inverse modeling; specification; Capacitance-voltage characteristics; Doping profiles; Impurities; Inverse problems; Poisson equations; Postal services; Semiconductor process modeling; Solid modeling; Surface fitting; Voltage;
Conference_Titel :
Design Automation Conference 1998. Proceedings of the ASP-DAC '98. Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
0-7803-4425-1
DOI :
10.1109/ASPDAC.1998.669421
