DocumentCode
2636801
Title
Inverse modeling-a promising approach to know what is made and what should be made
Author
Yamaguchi, Seiichiro ; Goto, Hiroshi
Author_Institution
Technol. Dev. Div., Fujitsu Labs. Ltd., Kawasaki, Japan
fYear
1998
fDate
10-13 Feb 1998
Firstpage
117
Lastpage
121
Abstract
Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its efficiency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required specification
Keywords
MOSFET; circuit CAD; semiconductor device models; deep submicron MOSFET; device performance; device structures; inverse modeling; specification; Capacitance-voltage characteristics; Doping profiles; Impurities; Inverse problems; Poisson equations; Postal services; Semiconductor process modeling; Solid modeling; Surface fitting; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference 1998. Proceedings of the ASP-DAC '98. Asia and South Pacific
Conference_Location
Yokohama
Print_ISBN
0-7803-4425-1
Type
conf
DOI
10.1109/ASPDAC.1998.669421
Filename
669421
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