• DocumentCode
    2636818
  • Title

    Advance high power Semiconductors devices in drives and power conversion

  • Author

    Al´Akayshee, Q. ; Reynolds, S. ; Golland, A. ; Wakeman, F.

  • Author_Institution
    Westcode Semicond. Ltd. (An IXYS Co.), Chippenham, UK
  • fYear
    2012
  • fDate
    27-29 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This Paper focuses on Westcode Semiconductors´ advanced high power devices; Diodes, Thyristors and Press-Pack IGBTs. Westcode, a division of IXYS Corporation, manufacture devices for use on many power sub-assemblies and have been meeting the strenuous demands of various applications within traction and energy markets. Electrical system performance is calculated using conventional methodology together with a computer thermal model. This modelling program uses an iterative approach to optimise various aspects of the design. The calculation, design, testing and operation of these power sub-systems are also presented and validated by experimental results.
  • Keywords
    insulated gate bipolar transistors; power convertors; power semiconductor diodes; thyristor circuits; thyristor motor drives; thyristors; driver circuits; high power semiconductors device; power conversion; press pack IGBT; semiconductor diode; semiconductor thyristors; High current; devices; medium voltage;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on
  • Conference_Location
    Bristol
  • Electronic_ISBN
    978-1-84919-616-1
  • Type

    conf

  • DOI
    10.1049/cp.2012.0167
  • Filename
    6242016