DocumentCode
2636818
Title
Advance high power Semiconductors devices in drives and power conversion
Author
Al´Akayshee, Q. ; Reynolds, S. ; Golland, A. ; Wakeman, F.
Author_Institution
Westcode Semicond. Ltd. (An IXYS Co.), Chippenham, UK
fYear
2012
fDate
27-29 March 2012
Firstpage
1
Lastpage
4
Abstract
This Paper focuses on Westcode Semiconductors´ advanced high power devices; Diodes, Thyristors and Press-Pack IGBTs. Westcode, a division of IXYS Corporation, manufacture devices for use on many power sub-assemblies and have been meeting the strenuous demands of various applications within traction and energy markets. Electrical system performance is calculated using conventional methodology together with a computer thermal model. This modelling program uses an iterative approach to optimise various aspects of the design. The calculation, design, testing and operation of these power sub-systems are also presented and validated by experimental results.
Keywords
insulated gate bipolar transistors; power convertors; power semiconductor diodes; thyristor circuits; thyristor motor drives; thyristors; driver circuits; high power semiconductors device; power conversion; press pack IGBT; semiconductor diode; semiconductor thyristors; High current; devices; medium voltage;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on
Conference_Location
Bristol
Electronic_ISBN
978-1-84919-616-1
Type
conf
DOI
10.1049/cp.2012.0167
Filename
6242016
Link To Document