Title :
Characterization and comparison of commercially available silicon carbide (SIC) power switches
Author :
Haehre, K. ; Meisser, M. ; Denk, F. ; Kling, R.
Author_Institution :
Light Technol. Inst. (LTI), Karlsruhe Instiute of Technol. (KIT), Karlsruhe, Germany
Abstract :
In this paper the electrical and thermal characteristics of commercially available SiC devices, normally-on and -off JFETs as well as a MOSFET, and of a high-voltage Si- MOSFET are presented. The mentioned characteristics are compared and it is shown which characteristics are the limiting factors when designing power electronics devices based on SiC power switches.
Keywords :
field effect transistor switches; power semiconductor switches; silicon compounds; wide band gap semiconductors; MOSFET; SiC; normally-off JFET; normally-on JFET; power electronic device; power switch; JFET; MOSFET; SiC; switching-losses; thermal analysis;
Conference_Titel :
Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on
Conference_Location :
Bristol
Electronic_ISBN :
978-1-84919-616-1
DOI :
10.1049/cp.2012.0168
