Title :
GaAs "Traveling-Wave" Transistor
Author :
Dean, R.H. ; DeBrecht, R.E. ; Dreeben, A.B. ; Hughes, J.J. ; Matarese, R.J. ; Napoli, L.S.
Abstract :
Present packaged GaAs "traveling-wave" transistors produce instantaneous 5-20 GHz CW net gain with 17 dB X-band noise figure. The devices employ self-aligned input electrodes. A versatile new broad-band microwave package has been developed.
Keywords :
Anodes; Cathodes; Electrodes; Feedback; Gain; Gallium arsenide; Microwave transistors; Noise figure; Ohmic contacts; Packaging;
Conference_Titel :
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location :
Boulder, CO, USA
DOI :
10.1109/GMTT.1973.1123173
