• DocumentCode
    2636851
  • Title

    GaAs "Traveling-Wave" Transistor

  • Author

    Dean, R.H. ; DeBrecht, R.E. ; Dreeben, A.B. ; Hughes, J.J. ; Matarese, R.J. ; Napoli, L.S.

  • fYear
    1973
  • fDate
    4-6 June 1973
  • Firstpage
    250
  • Lastpage
    252
  • Abstract
    Present packaged GaAs "traveling-wave" transistors produce instantaneous 5-20 GHz CW net gain with 17 dB X-band noise figure. The devices employ self-aligned input electrodes. A versatile new broad-band microwave package has been developed.
  • Keywords
    Anodes; Cathodes; Electrodes; Feedback; Gain; Gallium arsenide; Microwave transistors; Noise figure; Ohmic contacts; Packaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1973 IEEE G-MTT International
  • Conference_Location
    Boulder, CO, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1973.1123173
  • Filename
    1123173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2636851