The study of Si/metal/GaN fusion bonding

Author

Ting, Wang ; Lixin, Xu ; Zhanzhong, Cui

Author_Institution

Sch. of Aerosp. Sci. & Eng., Beijing Inst. of Technol., Beijing

fYear

2008

fDate

10-12 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

GaN-based light-emitting diodes (LEDs) grown on sapphire substrates are integrated with Si by fusion bonding technique. GaN-based LEDs coated with Sn/Au are joined to Si coated with Ti/Au at 300degC in a flowing nitrogen ambient for 30 min. Sapphire substrates are separated from the samples by laser lift-off (LLO) forming GaN-based LEDs/Sn/Au/Ti/Au/Si structures. Microscopy image, observed from the transparent GaN films, shows the uniform bonding interfaces free of air bubbles. The turn-on voltage of vertical GaN-based LEDs on Si decreases from 3.2 v to 3.0 v.

Keywords

gallium compounds; light emitting diodes; melting; sapphire; silicon; substrates; GaN-based light-emitting diodes; Si/metal/GaN fusion bonding; SnAuTiSiGaN; bonding interfaces; laser lift-off; sapphire substrates; temperature 300 degC; time 30 min; Gallium nitride; Gold; Light emitting diodes; Microscopy; Nitrogen; Optoelectronic devices; Temperature; Thermal conductivity; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems and Control in Aerospace and Astronautics, 2008. ISSCAA 2008. 2nd International Symposium on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-3908-9

Electronic_ISBN

978-1-4244-2386-6

Type

conf

DOI

10.1109/ISSCAA.2008.4776215

Filename

4776215