DocumentCode :
2636951
Title :
Transient gain dynamics in gain-clamped EDFA with different erbium dopant levels
Author :
Chan, P.S. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
816
Lastpage :
817
Abstract :
We study how the EDFA transient dynamics depend on different EDF lengths and erbium concentration theoretically and experimentally. Transient in surviving channels can be minimized with optimal design.
Keywords :
erbium; impurity distribution; optical fibre amplifiers; optical fibre communication; telecommunication channels; wavelength division multiplexing; EDF length; WDM channels; erbium concentration; erbium dopant levels; gain-clamped EDFA; transient gain dynamics; Bandwidth; Erbium; Erbium-doped fiber amplifier; Next generation networking; Optical crosstalk; Optical feedback; Optical fiber networks; Optical pumping; Optical saturation; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548258
Filename :
1548258
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2636951
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