Title :
Design of a 118-GHz sub-harmonic mixer using foundry diodes
Author :
Chen, Zhe ; Zhang, Bo ; Fan, Yong ; Zhang, Shixi ; Yang, Xiaofan
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113-123-GHz, with 6 mW of local oscillator (LO) power. At 118 GHz, a DSB conversion loss of 12.6 dB is measured with 8 mW of LO power.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diode mixers; gallium arsenide; microstrip circuits; millimetre wave mixers; oscillators; DSB conversion loss; GaAs; LO power; Schottky barrier diodes; double sideband conversion loss; flip-chip; foundry diodes; frequency 113 GHz to 123 GHz; local oscillator power; loss 12.6 dB; microstrip circuit; power 6 mW; power 8 mW; subharmonic pumped mixer; Electromagnetic waveguides; Integrated circuit modeling; Loss measurement; Mixers; Power harmonic filters; Radio frequency; Schottky diodes; Schottky diodes; Submillimeter-wave; subharmonic mixer;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607108
