DocumentCode
2637023
Title
Metamorphic growth of long-wavelength saturable absorber on GaAs substrates
Author
Vainionpää, A. ; Suomalainen, S. ; Tengvall, O. ; Hakulinen, T. ; Herda, R. ; Karirinne, S. ; Guina, M. ; Okhotnikov, O.G.
Author_Institution
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
842
Lastpage
843
Abstract
The metamorphic growth of InP on GaAs induces high density of the dislocations near GaAs/InP interface . In this study, it is demonstrated that the lattice-mismatch induced imperfections can be used to tailor the device properties. Particularly, the growth imperfections in semiconductor saturable absorber mirror (SESAM) is investigated as a mechanism for decreasing the recovery time of the absorption.
Keywords
III-V semiconductors; dislocation density; gallium arsenide; indium compounds; mirrors; optical fabrication; optical saturable absorption; semiconductor growth; GaAs; GaAs substrates; GaAs/InP interface; InP-GaAs; dislocation density; imperfections; lattice-mismatch; metamorphic growth; semiconductor saturable absorber mirror; Absorption; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Laser mode locking; Mirrors; Molecular beam epitaxial growth; Nonlinear optics; Optical buffering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548263
Filename
1548263
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