Title :
Improvement the Q-factor of multi-band inductor with 90 μm silicon substrate on plastic
Author :
Chang, H.M. ; Kao, H.L. ; Shih, S.P. ; Lee, Y.C. ; Ke, C.Y. ; Chang, L.C. ; Wu, C.H. ; Fu, Jeffrey S. ; Karmakar, Nemai C.
Author_Institution :
Dept. of Microelectron. Eng., Chung Hua Univ., Hsinchu, Taiwan
Abstract :
This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively. After thinning-down the Si substrate to 90 μm and mounting on plastic, the Q-factor can improve 25~31% without changing the inductance due to reducing the parasitic effect from Si-substrate.
Keywords :
CMOS integrated circuits; MMIC; Q-factor; VLSI; flexible electronics; inductance; inductors; ultra wideband technology; CMOS technology; MMIC; Q-factor; VLSI-standard Si substrate; frequency 3 GHz to 9 GHz; inductance; multiband inductor; parasitic effect; plastic; silicon substrate; size 0.18 mum; size 90 mum; ultrawide band range; Inductance; Inductors; Noise; Plastics; Radio frequency; Silicon; Substrates;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607110
