Title :
Si Via Interconnection Technique with Thermal Budget Design
Author :
Jinwoo, Jeong ; Eunsung, Lee ; Cheol, Kim Hyeon ; Changyoul, Moon ; Kukjin, Chun
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.
Abstract :
The silicon-through-via structure that can withstand high thermal budget of MEMS process is suggested for stacked MEMS package. The doped silicon is used as through- via material instead of metal. The key ideas and design are described in detail. SDB (silicon direct bonding) multi-stacking process and metal reflow technique are used for through-via fabrication. Through-via arrays with 40mum and 50mum spacing are fabricated. Resistance of the fabricated via is measured. The thermal characteristics of the silicon through-via are under evaluation
Keywords :
micromechanical devices; silicon; Si; metal reflow; silicon direct bonding; stacked MEMS package; thermal budget design; via interconnection; Copper; Micromechanical devices; Nickel; Packaging; Silicon; Stacking; Temperature; Thermal engineering; Thermal stresses; Wafer bonding;
Conference_Titel :
Thermal Issues in Emerging Technologies: Theory and Application, 2007. THETA 2007. International Conference on
Conference_Location :
Cairo
Print_ISBN :
1-4244-0897-0
Electronic_ISBN :
1-4244-0897-0
DOI :
10.1109/THETA.2007.363432
