DocumentCode :
2637167
Title :
Halogen free dry etching of InGaN/AlGaN optoelectronic device structures
Author :
Sale, T.E. ; Ahmed, S. ; Lancefield, D.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
860
Lastpage :
861
Abstract :
We have developed a halogen free inductively coupled plasma fast dry etch for InGaN/ AlGaN based LED and laser structures. The absence of any toxic source gases make the process much simpler to implement.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor lasers; sputter etching; wide band gap semiconductors; InGaN-AlGaN; InGaN/AlGaN LED; InGaN/AlGaN laser; halogen free dry etching; inductively coupled plasma fast dry etch; Aluminum gallium nitride; Dry etching; Gas lasers; Gases; Light emitting diodes; Optical coupling; Optoelectronic devices; Plasma applications; Plasma devices; Plasma sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548272
Filename :
1548272
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2637167
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