Title :
Towards p-type doping of ZnO by ion implantation
Author :
Coleman, V.A. ; Tan, H.H. ; Jagadish, C. ; Kucheyev, S.O. ; Zou, J. ; Phillips, M.R.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
The thermal stability of ion implanted ZnO was investigated. Heavily damaged ZnO decomposes with thermal treatment. This result has significant implications for ion implants into ZnO for p-type doping, and subsequent thermal treatments for activation.
Keywords :
II-VI semiconductors; heat treatment; ion implantation; optical materials; semiconductor doping; thermal stability; wide band gap semiconductors; zinc compounds; ZnO; decomposition; ion implantation; p-type doping; thermal stability; thermal treatment; Annealing; Atomic force microscopy; Crystallization; Doping; Gallium nitride; Ion implantation; Optical microscopy; Spectroscopy; Thermal stability; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548273
