DocumentCode
2637338
Title
Influence of operating temperature on passive mode locking of InGaAsP/InP laser diode
Author
Tan, W.K. ; Wong, Hiu Y. ; Kelly, Anthony E. ; Sorel, Marc ; Marsh, John H. ; Bryce, A.C.
Author_Institution
Dept. of Electrical and Electronics Engineering, Glasgow University, Rankine Building, 70Oakfield Avenue, G12 8LT, Glasgow, Scotland
fYear
2005
fDate
22-28 Oct. 2005
Firstpage
872
Lastpage
873
Abstract
The influence of operating temperature on the mode locked frequency of a passively mode locked InGaAsP/InP laser diode is reported. A simple model is used to account for the shift of frequency.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; semiconductor lasers; thermo-optical effects; InGaAsP-InP; InGaAsP/InP laser diode; frequency shift model; mode locked frequency; operating temperature; passive mode locking; Bandwidth; Diode lasers; Heat sinks; Indium phosphide; Laser mode locking; Masers; Optical pulse generation; Optical signal processing; Radio frequency; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548286
Filename
1548286
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