Title :
Second and third harmonic generations of vandyl-phthalocyanine single crystal prepared on KBr substrate by molecular beam epitaxy
Author :
Maeda, A. ; Okumura, N. ; Furuhashi, H. ; Yoshikawa, T. ; Uchida, Y. ; Kojima, K. ; Ohashi, A. ; Ochiai, S. ; Ieda, M. ; Mizutani, T.
Author_Institution :
Dept. of Electr. Eng., Aichi Inst. of Technol., Nagoya, Japan
Abstract :
Vandyl-phthalocyanine (VOPc) single crystals were prepared on KBr (100) substrate by molecular beam epitaxy (MBE). The second and third harmonic generations of nonlinear optical thin films are proportional to the square of the thickness. Therefore, it´s important to prepare a large nonlinear optical single crystal. The orientation of VOPc single crystals prepared by the MBE method was studied by optical absorption spectra in the visible and infrared regions, scanning electron microscopy (SEM) and reflection high energy electron diffraction (RHEED). VOPe single crystals on KBr were epitaxially or monoclinically grown
Keywords :
crystal orientation; infrared spectra; molecular beam epitaxial growth; optical harmonic generation; optical materials; organic compounds; reflection high energy electron diffraction; scanning electron microscopy; visible spectra; KBr; KBr (100) substrate; KBr substrate; MBE method; epitaxial growth; infrared regions; molecular beam epitaxy; monoclinic growth; nonlinear optical single crystal; nonlinear optical thin films; optical absorption spectra; orientation; reflection high energy electron diffraction; scanning electron microscopy; second harmonic generation; thickness; third harmonic generations; vandyl-phthalocyanine single crystal; visible regions; Crystals; Electron optics; Frequency conversion; Molecular beam epitaxial growth; Nonlinear optics; Optical films; Optical harmonic generation; Optical microscopy; Scanning electron microscopy; Substrates;
Conference_Titel :
Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
Conference_Location :
Kauai, HI
Print_ISBN :
0-7803-4950-4
DOI :
10.1109/NLO.1998.710247