Temperature effect on the buried double junction color detector behavior

Author

Haned, F. ; Ben Chouikha, M. ; Alquie, G.

Author_Institution

Pierre & Marie Curie Univ., Paris

fYear

2006

fDate

22-24 June 2006

Firstpage

107

Lastpage

110

Abstract

In this paper, we present a study of the buried double pn junction color detector dark current to take a more comprehensive view of the dominant mechanisms. For this purpose a variety of BDJ test cells with different dimensions have been designed and manufactured in AMS´ 0.35mum CMOS process. Reverse current-voltage characteristics and temperature dependence are used to distinguish the different mechanisms that contribute to the BDJ dark currents. We found that tunneling effect is the dominant mechanism for the shallow junction dark current, while for the deep junction thermal Shockley-Read-Hall generation is the main mechanism

Keywords

CMOS image sensors; integrated circuit modelling; p-n heterojunctions; tunnelling; 0.35 micron; BDJ test cells; CMOS process; active pixel sensor; buried double junction color detector behavior; dark current; double pn junction; reverse current-voltage characteristics; thermal Shockley-Read-Hall generation; tunneling effect; CMOS image sensors; CMOS process; CMOS technology; Dark current; Detectors; Manufacturing processes; Temperature dependence; Temperature sensors; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference

Conference_Location

Gdynia

Print_ISBN

83-922632-2-7

Type

conf

DOI

10.1109/MIXDES.2006.1706548

Filename

1706548