Title :
Ultrafast relaxation processes in nanostructured materials
Author :
Prasankumar, Rohit P. ; Averitt, R.D. ; Taylor, Antoinette J.
Author_Institution :
Div. of Mater. Sci. & Technol., Los Alamos Nat. Lab., NM, USA
Abstract :
Time-resolved dynamics of an InAs/InGaAs quantum-dots-in-a-well detector are measured at 3.9, 7.5, and 10 μm. This technique enables us to track carrier relaxation from three to two to zero dimensions for the first time.
Keywords :
III-V semiconductors; carrier relaxation time; gallium arsenide; high-speed optical techniques; indium compounds; infrared detectors; nanostructured materials; optical pumping; quantum well devices; semiconductor quantum dots; 10 mum; 3.9 mum; 7.5 mum; InAs-InGaAs; InAs/InGaAs quantum-dots-in-a-well detector; carrier relaxation tracking; midIR probe system; nanostructured materials; optical pump; time-resolved dynamics; ultrafast relaxation; Energy states; Gallium arsenide; Indium gallium arsenide; Materials science and technology; Nanostructured materials; Probes; Pulse amplifiers; Quantum dots; Stationary state; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548304
