Title :
NMOSFET numerical model to investigate the heat conduction effects
Author :
Djelti, H. ; Ouslimani, A. ; Feham, M. ; Kasbari, A.
Author_Institution :
Dept de Telecom, Univ. Abou Bekr Belkaid Tlemcen, Tlemcen, Algeria
Abstract :
Two dimensional numerical model of Si-NMOSFET with 0.2 μm gate length is proposed to investigate the effect of heat transfert on the transistor characteristics using comsol simulator. In addition to coupling Poisson and drift diffusion equations, the heat conduction equation is introduced in the numerical model. Temperature distribution due to the heat conduction is investigated. Simulation results show the effect of the heat conduction on the transistor characteristics in particular on I-V out-put characteristics, electric field and carriers velocity.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; heat transfer; semiconductor device models; silicon; 2D numerical model; NMOSFET numerical model; Si; carriers velocity; comsol simulator; current-voltage output characteristic; electric field; heat conduction effects; heat conduction equation; heat transfer; size 0.2 mum; Equations; Heating; Logic gates; Mathematical model; Numerical models; Temperature distribution; Thermal conductivity;
Conference_Titel :
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6352-7
DOI :
10.1109/ISSSE.2010.5607150
