NMOSFET numerical model to investigate the heat conduction effects

Author

Djelti, H. ; Ouslimani, A. ; Feham, M. ; Kasbari, A.

Author_Institution

Dept de Telecom, Univ. Abou Bekr Belkaid Tlemcen, Tlemcen, Algeria

Volume

1

fYear

2010

fDate

17-20 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

Two dimensional numerical model of Si-NMOSFET with 0.2 μm gate length is proposed to investigate the effect of heat transfert on the transistor characteristics using comsol simulator. In addition to coupling Poisson and drift diffusion equations, the heat conduction equation is introduced in the numerical model. Temperature distribution due to the heat conduction is investigated. Simulation results show the effect of the heat conduction on the transistor characteristics in particular on I-V out-put characteristics, electric field and carriers velocity.

Keywords

MOSFET; carrier mobility; elemental semiconductors; heat transfer; semiconductor device models; silicon; 2D numerical model; NMOSFET numerical model; Si; carriers velocity; comsol simulator; current-voltage output characteristic; electric field; heat conduction effects; heat conduction equation; heat transfer; size 0.2 mum; Equations; Heating; Logic gates; Mathematical model; Numerical models; Temperature distribution; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals Systems and Electronics (ISSSE), 2010 International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6352-7

Type

conf

DOI

10.1109/ISSSE.2010.5607150

Filename

5607150