Title :
The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes
Author :
Sears, K. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In this presentation we will discuss the detrimental effects that low temperature grown AlGaAs cladding and waveguide layers have on MOCVD grown InAs/GaAs QD laser performance and our efforts at overcoming this problem.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; claddings; gallium arsenide; indium compounds; quantum dot lasers; waveguide lasers; AlGaAs; AlGaAs cladding layers; InAs-GaAs; InAs/GaAs quantum dot laser; MOCVD; laser diodes; low temperature growth; waveguide layers; Chemical lasers; Diode lasers; Gallium arsenide; MOCVD; Quantum dot lasers; Quantum well lasers; Radiative recombination; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548306
