• DocumentCode
    2637705
  • Title

    Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD

  • Author

    Mokkapati, S. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Australia
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    915
  • Lastpage
    916
  • Abstract
    We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to simultaneously grow quantum-dots, for the active region of the laser, and quantum-wells, for the waveguide region.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; quantum dot lasers; quantum well lasers; waveguide lasers; InGaAs; InGaAs quantum-dot laser; passive waveguide integration; quantum-dot active region; quantum-well waveguide region; selective-area MOCVD; Epitaxial layers; Indium gallium arsenide; Laser theory; Laser tuning; MOCVD; Optical waveguides; Photonic band gap; Quantum dot lasers; Substrates; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548308
  • Filename
    1548308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2637705