Title :
High Gain LNA Design For WMAN Receiver & Optimization With Simulated Annealing Algorithm
Author :
Kalantari, F. ; Masoumi, N. ; Hoseini, A.R.
Author_Institution :
Tehran Univ.
Abstract :
This paper presents a 5.25 GHz high linearity high gain LNA design for a receiver architecture based on IEEE802.16a WMAN standard. The targeted frequency band is the unlicensed band UNII 5 GHz. In our design we consider the effect of induced gate noise in MOS devices. Also we optimize our design with a random search algorithm named simulated annealing and we compare the results. The amplifier achieves voltage gain of 27.1 and 28.5 dB, noise figure of 2.03 and 2.26 dB, the IIP3 of 13.1 and 14 dBm, and the reverse isolation is about -11.03 and -11.22 dB, the LNA dissipates 7.5, 6.0 mW using a 1.8 V supply voltage respectively. Optimized design is simulated with Hspice in 0.18 mum CMOS technology
Keywords :
CMOS integrated circuits; IEEE standards; low noise amplifiers; metropolitan area networks; microwave receivers; simulated annealing; 0.18 micron; 1.8 V; 2.03 dB; 2.26 dB; 27.1 dB; 28.5 dB; 5.25 GHz; CMOS technology; IEEE802.16a; MOS devices; WMAN receiver; amplifier noise; high gain LNA design; high linearity LNA design; induced gate noise; low noise amplifier; receiver architecture; simulated annealing algorithm; Algorithm design and analysis; CMOS technology; Design optimization; Frequency; Isolation technology; Linearity; MOS devices; Noise figure; Simulated annealing; Voltage;
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
DOI :
10.1109/MIXDES.2006.1706588
