DocumentCode :
2638331
Title :
Role of temperature and gas-chemistry in micro-masking of InP by ICP etching
Author :
Karouta, F. ; Docter, B. ; Geluk, E.J. ; Sander-Jochem, M.J.H. ; van der Tol, J.J.G.M. ; Smit, M.K.
Author_Institution :
COBRA Res. Inst., Eindhoven Univ. of Technol., Netherlands
fYear :
2005
fDate :
22-28 Oct. 2005
Firstpage :
987
Lastpage :
988
Abstract :
This study demonstrates that micro-masking in Cl2-CH4-H2 ICP etching of semi-insulating InP is attributed to an excessive heating of the sample in conjunction with the use of methane. On the other hand, this work also shows that micro-masking of n-InP in Cl2-Ar-H2 ICP etching is due to the slow desorption of InCl3.
Keywords :
III-V semiconductors; desorption; etching; heat treatment; indium compounds; Cl2-CH4-H2 etching; ICP etching; InCl3; InP; excessive heating; gas-chemistry; methane; micromasking; semiinsulating InP; slow desorption; Cyclotrons; Electrodes; Electron beams; Etching; Heat sinks; Indium phosphide; Plasma applications; Plasma chemistry; Plasma temperature; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
Type :
conf
DOI :
10.1109/LEOS.2005.1548344
Filename :
1548344
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2638331
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