Title :
On quantifying the group-V to group-III interdiffusion rate in InxGa1-xAs/InP quantum wells by differential reflectance
Author :
Gareso, P.L. ; Buda, M. ; Tan, H.H. ; Jagadish, C. ; Ilyas, S. ; Gal, M.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Differential reflectance (DR) measurements have been used to investigate the atomic intermixing of InxGa1-xAs/InP quantum well structures using proton implantation. From DR spectra results we identified the heavy-hole and light-hole energy transitions, and from that the ratio of diffusion coefficient of group-V/group-III sublattices k=DV/DIII in lattice-matched (LM), tensile-strained (TS) and compressive-strained (CS) InGaAs QW were calculated. These values were 1.25, 1.05 and 1.40 for LM, TS and CS respectively.
Keywords :
III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; ion implantation; reflectivity; semiconductor quantum wells; InxGa1-xAs-InP; InxGa1-xAs/InP quantum wells; atomic intermixing; compressive-strained quantum well; differential reflectance measurements; differential reflectance spectra; diffusion coefficient; group-III interdiffusion rate; group-III sublattices; group-V interdiffusion rate; group-V sublattices; heavy-hole energy transitions; lattice-matched quantum well; light-hole energy transitions; proton implantation; tensile-strained quantum well; Atomic measurements; Indium gallium arsenide; Indium phosphide; Performance evaluation; Physics; Protons; Rapid thermal annealing; Reflectivity; Spectroscopy; Temperature measurement; Differential reflectance (DR); intermixing;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548345
