Title :
Laser beam induced current characterisation of HgCdTe processed using plasma techniques
Author :
Park, B.A. ; Winchester, K.J. ; Musca, C.A. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Western Australia Univ., Crawley, WA, Australia
Abstract :
In this paper, laser beam induced current (LBIC) has been applied to the characterization of HgCdTe n-on-p junctions fabricated through plasma induced type conversion using an inductively coupled plasma reactive ion etching (ICPRIE) tool. The nondestructive LBIC technique allows for characteristics of junctions formed under a number of different ICPRIE plasma process conditions to be investigated using only two remote contacts. This is done in order to refine the fabrication procedure which aims for controlled doping modification to produce high performance photodiodes.
Keywords :
II-VI semiconductors; cadmium compounds; mercury compounds; nondestructive testing; p-n junctions; plasma materials processing; sputter etching; HgCdTe processing; controlled doping; inductively coupled plasma reactive ion etching; laser beam induced current; n-on-p junctions; nondestructive LBIC; photodiodes; plasma induced type conversion; plasma techniques; remote contacts; Doping; Etching; Fabrication; Laser beams; Optical coupling; Particle beams; Photodiodes; Plasma applications; Plasma properties; Refining;
Conference_Titel :
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Print_ISBN :
0-7803-9217-5
DOI :
10.1109/LEOS.2005.1548346
