Title :
Wideband, High Gain, Dual Diode Gunn Amplifier Circuits
Author :
de Koning, J.G. ; Goldwasser, R.E. ; Hamilton, R.J., Jr.
Author_Institution :
Solid State West Div., GaAs Microwave R&D Dept., Varian Associates, Palo Alto, CA, USA
Abstract :
Design and performance of wide band, low noise, single stage 10 dB gain Gunn amplifiers in X, Ku and K-band are described. Novel dual diode circuits have been utilized to achieve nearly full band gain with two series connected cathode notch Gunn diodes. Average gains of 9.3 to 11.2 dB have been obtained over 90% of X and Ku-band and 75% of K-band. Noise figures are 15.5 to 18.9 dB.
Keywords :
Gunn diodes; low noise amplifiers; microwave amplifiers; wideband amplifiers; GaAs; K band; Ku band; X band; dual diode Gunn amplifier circuit; gain 10 dB; high gain amplifier circuit; low noise Gunn amplifier; noise figure 15.5 dB to 18.9 dB; single stage Gunn amplifier; wideband amplifier circuit; Bonding; Broadband amplifiers; Circuit noise; Diodes; Frequency; Gunn devices; Impedance; K-band; Microstrip; Noise figure;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123286
