Title :
A High Power Waveguide IMPATT Amplifier
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
A CW waveguide amplifier using a silicon double-drift IMPATT diode provides 10 dB gain with 2 Watts output at 11.2 GHz. A design procedure for control of frequency, gain, and bandwidth is described.
Keywords :
IMPATT amplifiers; frequency control; gain control; microwave amplifiers; waveguides; CW waveguide amplifier; bandwidth control; frequency 11.2 GHz; frequency control; gain 10 dB; gain control; high-power waveguide IMPATT amplifier; power 2 W; silicon double-drift IMPATT diode; Circuits; Coaxial components; Electromagnetic waveguides; Frequency; High power amplifiers; Impedance; Light emitting diodes; Planar waveguides; Power amplifiers; Waveguide discontinuities;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123288
