DocumentCode
2638786
Title
High Power Pulsed UHF and L-Band P+-N-N+ Silicon TRAPATT Diode Oscillators
Author
Obah, Chuka O G ; Benko, E. ; Bowers, H.C. ; Midford, T.A.
Author_Institution
Electron Dynamics Div., Hughes Aircraft Co., Torrance, CA, USA
fYear
1975
fDate
12-14 May 1975
Firstpage
88
Lastpage
90
Abstract
TRAPATT oscillators utilizing highly graded p+-n-n+ silicon junction devices with large p-region width to total depletion region width ratios have produced more than 500 W pulsed power output with a minimum efficiency of 25% in the UHF and L-band ranges.
Keywords
TRAPATT diodes; UHF diodes; semiconductor junctions; L band p+-n-n+ silicon TRAPATT diode oscillators; L band range; UHF range; high power pulsed UHF; highly graded p+-n-n+ silicon junction devices; large p-region width; power 500 W; pulsed power output; total depletion region; Capacitors; Circuits; Diodes; Electron traps; L-band; Oscillators; Power harmonic filters; Radio frequency; Silicon; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location
Palo Alton, CA
Type
conf
DOI
10.1109/MWSYM.1975.1123290
Filename
1123290
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