Principles and application of advanced transient photoconductivity techniques

Author

Vaezi-Nejad, S.M. ; Jenner, R.P.

Author_Institution

School of Eng., Greenwich Univ., London, UK

Volume

2

fYear

1997

fDate

19-21 May 1997

Firstpage

942

Abstract

Rapid advances in instrumentation and measurement technology are partly due to our better understanding of properties of materials and devices used in this technology. Important electrical properties of a wide range of high resistivity materials and devices can be investigated using techniques based on transient photoconductivity. In this paper, the principles of operation of advanced transient photoconductivity techniques developed in recent years and their application to amorphous semiconductors and polymeric materials are discussed. A novel apparatus developed by the authors are briefly described

Keywords

amorphous semiconductors; electrical conductivity measurement; photoconductivity; polymers; semiconductor device testing; transient response; amorphous semiconductors; electrical properties; interrupted transit time of flight; polymeric materials; resistivity materials; transient photoconductivity; xerographic time of flight measurement; Amorphous materials; Amorphous semiconductors; Conductivity; Photoconducting devices; Photoconducting materials; Photoconductivity; Polymers; Semiconductor materials; Steady-state; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1997. IMTC/97. Proceedings. Sensing, Processing, Networking., IEEE

Conference_Location

Ottawa, Ont.

ISSN

1091-5281

Print_ISBN

0-7803-3747-6

Type

conf

DOI

10.1109/IMTC.1997.610268

Filename

610268