DocumentCode :
2638812
Title :
Analysis And Design Of Ptat Temperature Sensor In Digital CMOS VLSI Circuits
Author :
Golda, A. ; Kos, A.
Author_Institution :
AGH Univ. of Sci. & Technol., Krakow
fYear :
2006
fDate :
22-24 June 2006
Firstpage :
415
Lastpage :
420
Abstract :
The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor
Keywords :
CMOS integrated circuits; VLSI; heating; temperature sensors; CMOS VLSI circuits; proportional to absolute temperature; self-heating; temperature sensor; vertical PNP structure; Analytical models; Biosensors; Bipolar transistors; CMOS digital integrated circuits; Circuit simulation; Sensor phenomena and characterization; Temperature measurement; Temperature sensors; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
Type :
conf
DOI :
10.1109/MIXDES.2006.1706612
Filename :
1706612
Link To Document :
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