DocumentCode
2638832
Title
Die Attach Thermal Monitoring Of IGBT Devices
Author
Masana, F.N.
Author_Institution
Catalunya Polytech. Univ., Barcelona
fYear
2006
fDate
22-24 June 2006
Firstpage
421
Lastpage
424
Abstract
Die attach contribution to total thermal resistance can be a significant part of its final value. Material choice, bondline thickness, voiding and interface delamination are some of the key factors affecting attachment quality, while process variations may seriously impair the final heat transfer characteristics of finished devices. In this work, we introduce a fast method to monitor die attach interface in finished devices. The measurements are performed onto IGBT´s, although the method may be used on any bipolar device by correct choice of measurement setup
Keywords
delamination; heat transfer; insulated gate bipolar transistors; microassembling; thermal resistance; IGBT devices; bondline thickness; die attach thermal monitoring; heat transfer; interface delamination; thermal impedance; thermal phase shift; thermal resistance; Frequency domain analysis; Frequency measurement; Impedance measurement; Insulated gate bipolar transistors; Microassembly; Monitoring; Testing; Thermal resistance; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706613
Filename
1706613
Link To Document