• DocumentCode
    2638832
  • Title

    Die Attach Thermal Monitoring Of IGBT Devices

  • Author

    Masana, F.N.

  • Author_Institution
    Catalunya Polytech. Univ., Barcelona
  • fYear
    2006
  • fDate
    22-24 June 2006
  • Firstpage
    421
  • Lastpage
    424
  • Abstract
    Die attach contribution to total thermal resistance can be a significant part of its final value. Material choice, bondline thickness, voiding and interface delamination are some of the key factors affecting attachment quality, while process variations may seriously impair the final heat transfer characteristics of finished devices. In this work, we introduce a fast method to monitor die attach interface in finished devices. The measurements are performed onto IGBT´s, although the method may be used on any bipolar device by correct choice of measurement setup
  • Keywords
    delamination; heat transfer; insulated gate bipolar transistors; microassembling; thermal resistance; IGBT devices; bondline thickness; die attach thermal monitoring; heat transfer; interface delamination; thermal impedance; thermal phase shift; thermal resistance; Frequency domain analysis; Frequency measurement; Impedance measurement; Insulated gate bipolar transistors; Microassembly; Monitoring; Testing; Thermal resistance; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
  • Conference_Location
    Gdynia
  • Print_ISBN
    83-922632-2-7
  • Type

    conf

  • DOI
    10.1109/MIXDES.2006.1706613
  • Filename
    1706613