DocumentCode
2639368
Title
The Impact Of Technology Parameters On The Performance Of Common-gate LNAs
Author
Stücke, T. ; Christoffers, N. ; Kokozinski, R. ; Kolnsberg, S. ; Hosticka, B.J.
Author_Institution
Fraunhofer Inst. for Microelectron. Circuits & Syst.
fYear
2006
fDate
22-24 June 2006
Firstpage
538
Lastpage
543
Abstract
In this paper the impact of short channel effects on the performance of common-gate LNAs (CG-LNAs) is presented. It based on the modeling the MOSFET behavior including its intrinsic and extrinsic parasitics in all possible regions of operation. Characteristic performance figures of the used CMOS technology are defined and the bias dependent minimum input reflection coefficient and noise figure is determined. The paper shows furthermore the advantage of biasing the CG-LNA in the moderate inversion region
Keywords
CMOS integrated circuits; MOSFET circuits; low noise amplifiers; CMOS technology; MOSFET; common-gate LNA; noise figure; reflection coefficient; short channel effects; technology parameters; Acoustic reflection; CMOS technology; Capacitors; Frequency; Inductors; Linearity; MOSFET circuits; Microelectronics; Noise figure; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706638
Filename
1706638
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