DocumentCode :
2639523
Title :
Future Prospects Of Beam Epitaxies For Optoelectronics
Author :
Tsang, W.T.
Author_Institution :
At&t Bell Laboratories
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
9
Lastpage :
10
Keywords :
Epitaxial growth; FETs; Gallium arsenide; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Production; Thickness control; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638917
Filename :
638917
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2639523
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