DocumentCode
2639523
Title
Future Prospects Of Beam Epitaxies For Optoelectronics
Author
Tsang, W.T.
Author_Institution
At&t Bell Laboratories
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
9
Lastpage
10
Keywords
Epitaxial growth; FETs; Gallium arsenide; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Production; Thickness control; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638917
Filename
638917
Link To Document