DocumentCode :
2639643
Title :
A new IGBT model based on distribution PIN model for spice
Author :
Starzak, Lukaz ; Napieralski, Andrzej
Author_Institution :
Tech. Univ. of Lodz
fYear :
2006
fDate :
22-24 June 2006
Firstpage :
603
Lastpage :
606
Abstract :
There is a growing need for power device models that would be both accurate and fast. A pin diode model developed earlier and implemented in Berkeley SPICE through code modification is used to design a simple IGBT model that fulfills these requirements. The approach adopted in this work is also applicable to other power semiconductor devices that contain the wide and lightly doped base layer
Keywords :
SPICE; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT model; SPICE; distributed pin model; power device models; Computer science; Insulated gate bipolar transistors; Microelectronics; SPICE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location :
Gdynia
Print_ISBN :
83-922632-2-7
Type :
conf
DOI :
10.1109/MIXDES.2006.1706653
Filename :
1706653
Link To Document :
بازگشت