DocumentCode :
2639768
Title :
Gas-source MBE Growth Of III-V Compound Semiconductors
Author :
Tu, C.W. ; Hou, H.Q. ; Liang, B.W. ; Chin, T.P. ; Ho, M.C.
Author_Institution :
University of California, San Diego
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
11
Lastpage :
12
Keywords :
Electromagnetic wave absorption; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laser sintering; Optical modulation; Optical waveguides; Semiconductor waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638918
Filename :
638918
Link To Document :
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