• DocumentCode
    2639967
  • Title

    Direct detection of single-base extension reaction using genetic field effect transistor

  • Author

    Sakata, Toshiya ; Miyahara, Yuji

  • Author_Institution
    Biomater. Center, Nat. Inst. for Mater. Sci., Ibaraki, Japan
  • fYear
    2005
  • fDate
    12-15 May 2005
  • Firstpage
    219
  • Lastpage
    222
  • Abstract
    We have proposed a novel field effect transistor (FET) in combination with single-base extension for a direct, simple and non-labeled DNA sequencing, which is based on detection of molecular recognition at the gate insulator by the field effect. The intrinsic negative charges generated by DNA polymerase-assisted incorporation of deoxynucleotides can be transduced directly into electrical signal. Mere, we demonstrate that single-base extension at the gate surface can be detected directly as a shift of the threshold voltage of the FET. Moreover, it was possible to determine the base sequence of the target DNA by the iterative cycles of single-base extension with each deoxynucleotides and measurement of the threshold voltage.
  • Keywords
    DNA; field effect transistors; genetics; molecular biophysics; DNA polymerase; deoxynucleotide; gate insulator; genetic field effect transistor; intrinsic negative charge; molecular recognition detection; non-labeled DNA sequencing; single-base extension; threshold voltage measurement; DNA; Electrodes; FETs; Genetics; Insulation; Polymers; Probes; Sequences; Signal generators; Threshold voltage; DNA chip; genetic field effect transistor; single-base extension;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microtechnology in Medicine and Biology, 2005. 3rd IEEE/EMBS Special Topic Conference on
  • Print_ISBN
    0-7803-8711-2
  • Type

    conf

  • DOI
    10.1109/MMB.2005.1548431
  • Filename
    1548431