Title :
Electrical stress on thin film TaN resistive structures
Author :
Bonfert, Detlef ; Gieser, Horst ; Bock, Karlheinz ; Svasta, Paul ; Ionescu, Ciprian
Author_Institution :
Fraunhofer Res. Instn. of Modular Solid State Technol., EMFT, Munich, Germany
Abstract :
Tantalum nitride thin films (TaNx) are mechanically hard, self-passivated and corrosion - resistive layers, often used for precise thin film resistors. In order to investigate the behavior at high current densities, a DC- and a pulsed measurement technique was applied to the film resistive structures. The analysis is made on TaNx thin film resistors on silicon substrates, with applied DC- and pulsed stress, showing the behavior before, during and after stressing. Permanent Changes or destruction of the resistive layer can occur.
Keywords :
current density; electrical resistivity; pulse measurement; tantalum compounds; thin film resistors; DC measurement technique; Si; TaNx; corrosion-resistive layers; current density; electrical stress; pulsed measurement technique; pulsed stress; thin film TaN resistive structures; thin film resistors; Current measurement; Electrical resistance measurement; Resistance; Resistors; Silicon; Stress; Transmission line measurements; DC-and Pulsed Stress; Tantalum Nitride (TaNx); Thin Film Resistors; Transmission Line Pulsing;
Conference_Titel :
Design and Technology in Electronic Packaging (SIITME), 2011 IEEE 17th International Symposium for
Conference_Location :
Timisoara
Print_ISBN :
978-1-4577-1276-0
Electronic_ISBN :
978-1-4577-1275-3
DOI :
10.1109/SIITME.2011.6102743
