DocumentCode :
2640365
Title :
Noise in Microwave Transmission Applications of Gunn and IMPATT Diodes -- The System/Circuit Interface in Gunn Diode Applications
Author :
Ivanek, Ferdo
Author_Institution :
Bell Telephone Labs., Inc., Allentown, PA, USA
fYear :
1975
fDate :
12-14 May 1975
Firstpage :
306
Lastpage :
306
Abstract :
Output power amplifiers using Impatt diodes are now being used in EM radio relay transmitters. In order to obtain high overall efficiency, the diodes are operated close to maximum rf output power. Since the noise figure increases monotonically with output power, an optimum tradeoff between power and noise must be sought.
Keywords :
IMPATT diodes; power amplifiers; radio transmitters; EM radio relay transmitters; IMPATT diode; power amplifiers; system/circuit interface; Baseband; Circuit noise; Diodes; Frequency modulation; Gunn devices; Injection-locked oscillators; Local oscillators; Microwave circuits; Radio frequency; Radio transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
Type :
conf
DOI :
10.1109/MWSYM.1975.1123372
Filename :
1123372
Link To Document :
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