DocumentCode :
2640383
Title :
Noise in Microwave Transmission Applications of Gunn and IMPATT Diodes -- On the Circuit-Device Interface in IMPATT-Diode Applications
Author :
Vlaardingerbroek, M.T.
fYear :
1975
fDate :
12-14 May 1975
Firstpage :
307
Lastpage :
307
Abstract :
The avalanche process in an IMPATT-diode is inherently noisy. On the other hand the IMPATT-diode has the highest C.W. power capabilities, compared with the other active solid-state microwave devices. Therefore, several applications can only be realized using IMPATT-devices and must be designed in such a way that the noise is acceptable.
Keywords :
Circuit noise; Delay; Diodes; Gunn devices; Microwave circuits; Oscillators; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alto, CA, USA
Type :
conf
DOI :
10.1109/MWSYM.1975.1123373
Filename :
1123373
Link To Document :
بازگشت