DocumentCode
2640405
Title
The Circuit/Device Interface in Gunn and IMPATT Diode Applications
Author
Sweet, Allen A.
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
fYear
1975
fDate
12-14 May 1975
Firstpage
308
Lastpage
309
Abstract
The avalanche process in an IMPATT-diode is inherently noisy. On the other hand the IMPATT-diode has the highest C.W. power capabilities, compared with the other active solid-state microwave devices. Therefore, several applications can only be realized using IMPATT- devices and must be designed in such a way that the noise is acceptable. Let us first consider the noise generation in an IMPATT-diode. The noise is due to the random character of the avalanche process and is, in principle, shot noise. However, due to the large multiplication factor this shot noise is amplified. Every deviation from equilibrium will grow at a fast rate, depending on the intrinsic response time.
Keywords
IMPATT diodes; microwave devices; shot noise; C.W. power capability; IMPATT-diode; avalanche process; circuit-device interface; multiplication factor; shot noise; solid-state microwave device; Circuit noise; Circuit optimization; Coupling circuits; Gunn devices; Low-frequency noise; Noise figure; Radio frequency; Semiconductor device noise; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location
Palo Alton, CA
Type
conf
DOI
10.1109/MWSYM.1975.1123374
Filename
1123374
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