• DocumentCode
    2640545
  • Title

    Feedback Effects on the Noise Performance of GaAs MESFETs

  • Author

    Vendelin, George D.

  • Author_Institution
    Varian Assoc., Palo Alto, CA, USA
  • fYear
    1975
  • fDate
    12-14 May 1975
  • Firstpage
    324
  • Lastpage
    326
  • Abstract
    A technique is presented for evaluating the effect of lossless feedback on the four noise parameters of a transistor. The feedback effects on noise parameters are presented for a FMT940 GaAs MESFET at 4 and 8 GHz.
  • Keywords
    Schottky gate field effect transistors; feedback; gallium arsenide; semiconductor device noise; FMT940 MESFET; GaAs; MESFETS; feedback effects; frequency 4 GHz; frequency 8 GHz; lossless feedback; noise performance; transistor noise parameters; Capacitance; Circuit noise; Circuit stability; Feedback; Gallium arsenide; Inductance; MESFETs; Noise figure; Noise measurement; Packaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1975 IEEE-MTT-S International
  • Conference_Location
    Palo Alton, CA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1975.1123381
  • Filename
    1123381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2640545