Title :
Feedback Effects on the Noise Performance of GaAs MESFETs
Author :
Vendelin, George D.
Author_Institution :
Varian Assoc., Palo Alto, CA, USA
Abstract :
A technique is presented for evaluating the effect of lossless feedback on the four noise parameters of a transistor. The feedback effects on noise parameters are presented for a FMT940 GaAs MESFET at 4 and 8 GHz.
Keywords :
Schottky gate field effect transistors; feedback; gallium arsenide; semiconductor device noise; FMT940 MESFET; GaAs; MESFETS; feedback effects; frequency 4 GHz; frequency 8 GHz; lossless feedback; noise performance; transistor noise parameters; Capacitance; Circuit noise; Circuit stability; Feedback; Gallium arsenide; Inductance; MESFETs; Noise figure; Noise measurement; Packaging;
Conference_Titel :
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location :
Palo Alton, CA
DOI :
10.1109/MWSYM.1975.1123381
