Compound hybrid-type sensor for wide temperature measurement range

A compound hybrid-type surface temperature sensor that is composed of two main components: a metal film that makes contact with the object, and optical detectors that are used to measure spectral radiances of the rear surface film. This compound device is composed of a photovoltaic silicon and an InGaAs sensors, resulting in covering of wide temperature range from 600 to 1300 K. Temperature measurement experiments of silicon wafers have been carried out in the temperature range from 600 to 1000 K at the moment. As a result, the temperatures of silicon wafers can be measured within a random error of plusmn1.0 K with rapid response of 1 s. In this paper, the construction of the compound hybrid-type surface temperature sensor and experimental results are presented in detail. This sensor is expected to be widely applicable for a calibration means of in situ temperature measurements in various processes, especially in the semiconductor industry.