• DocumentCode
    2641182
  • Title

    High Reflectivity, 1.55μm InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy

  • Author

    Choa, F.S. ; Tai, K. ; Tsang, W.T. ; Chu, S.N.G.

  • Author_Institution
    AT&T Bell Laboratories
  • fYear
    1991
  • fDate
    29 Jul-2 Aug 1991
  • Firstpage
    23
  • Lastpage
    24
  • Keywords
    Chemicals; Crystalline materials; Fluctuations; Indium phosphide; Mirrors; Optical surface waves; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
  • Print_ISBN
    0-87942-618-7
  • Type

    conf

  • DOI
    10.1109/LEOSST.1991.638925
  • Filename
    638925