DocumentCode
2641182
Title
High Reflectivity, 1.55μm InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy
Author
Choa, F.S. ; Tai, K. ; Tsang, W.T. ; Chu, S.N.G.
Author_Institution
AT&T Bell Laboratories
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
23
Lastpage
24
Keywords
Chemicals; Crystalline materials; Fluctuations; Indium phosphide; Mirrors; Optical surface waves; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638925
Filename
638925
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