Analysis of the structural properties of polycrystalline silicon germanium films

Author

Sedky, Sherif ; Fiorini, Paolo ; Loreti, Stefano ; Cayma, Matty ; Baert, K. ; Vanhoof, Chris

Author_Institution

Dept. of Eng. Phys., Cairo Univ., Giza, Egypt

fYear

1999

fDate

22-24 Nov. 1999

Firstpage

67

Lastpage

70

Abstract

In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved.

Keywords

Ge-Si alloys; X-ray diffraction; internal stresses; micromachining; micromechanical devices; semiconductor materials; stress analysis; surface structure; transmission electron microscopy; 625 C; SiGe; TEM; X-ray diffraction spectroscopy; XRD; as-grown poly SiGe; deposition conditions; layer thickness; mechanical properties; poly SiGe films; polycrystalline silicon germanium films; stress gradient; structural properties; surface micromachining applications; tensile stress; thermal budget; transmission electron microscopy; Germanium silicon alloys; Mechanical factors; Micromachining; Semiconductor films; Silicon germanium; Spectroscopy; Tensile stress; Transmission electron microscopy; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1999. ICM '99. The Eleventh International Conference on

Print_ISBN

0-7803-6643-3

Type

conf

DOI

10.1109/ICM.2000.884807

Filename

884807