A 245 GHz transmitter in SiGe technology

Author

Schmalz, K. ; Borngräber, J. ; Heinemann, B. ; Rücker, H. ; Scheytt, J.C.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

17-19 June 2012

Firstpage

195

Lastpage

198

Abstract

A 245 GHz transmitter for sensing applications has been realized, which consists of a push-push VCO with 1/64 frequency divider, a transformer- coupled one-stage power amplifier, and a frequency doubler. It is fabricated in 0.13μm SiGe:C BiCMOS technology with f_T/f_max of 300GHz/500GHz. The peak output power of the transmitter is 2 dBm. The 3-dB bandwidth reaches from 229 GHz to 251 GHz. The output power is 1 dBm at 245 GHz. The transmitter dissipates 0.29 W. Additionally, a test-circuit with an integrated two-stage power amplifier and a frequency doubler is presented, which reaches 1.4 dBm at 245 GHz and dissipates 0.19 W.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; millimetre wave detectors; millimetre wave integrated circuits; radio transmitters; 1/64 frequency divider; BiCMOS technology; SiGe:C; bandwidth 229 GHz to 251 GHz; frequency 245 GHz; frequency 300 GHz; frequency 500 GHz; frequency doubler; integrated two-stage power amplifier; power 0.19 W; power 0.29 W; push-push VCO; size 0.13 mum; test-circuit; transformer-coupled one-stage power amplifier; transmitter; Frequency conversion; Frequency measurement; Power amplifiers; Power generation; Silicon germanium; Transmitters; Voltage-controlled oscillators; 120 GHz; 245 GHz; SiGe; VCO; frequency doubler; mm-wave circuits; power amplifier; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242262

Filename

6242262